Microstructure and Electrical Properties in Low‐   Sb   2   O   3 ‐Doped   Pr   6   O   11  Ceramics | Zendy

Peng Shujie | Zendy; Wang Yu | Zendy; Wang Haiqing | Zendy; Dong Xiang | Zendy; Dong Liang | Zendy; Gan Yingjie | Zendy

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Microstructure and Electrical Properties in Low‐ Sb 2 O 3 ‐Doped Pr 6 O 11 Ceramics

Author(s) -

Peng Shujie,

Wang Yu,

Wang Haiqing,

Dong Xiang,

Dong Liang,

Gan Yingjie

Publication year - 2012

Publication title -

journal of the american ceramic society

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.9

H-Index - 196

eISSN - 1551-2916

pISSN - 0002-7820

DOI - 10.1111/j.1551-2916.2012.05260.x

Subject(s) - microstructure , materials science , analytical chemistry (journal) , grain size , doping , ceramic , grain boundary , electrical resistivity and conductivity , phase (matter) , mineralogy , chemistry , metallurgy , chromatography , electrical engineering , optoelectronics , organic chemistry , engineering

The microstructure and electrical properties of the Pr 6 O 11 ‐based varistor ceramics composed of Pr 6 O 11 – Sb 2 O 3 ceramics were investigated in the Sb 2 O 3 content range 0–5.0 mol%. The samples were fabricated by conventional ceramic techniques. The results demonstrated that the addition of Sb 2 O 3 to Pr 6 O 11 can promote the grain growth and the densification of the Pr 6 O 11 ‐based ceramics. The average grain size of Pr 6 O 11 increased and then decreased as the Sb 2 O 3 content increased, reaching 16.4 μm by doping with 1.0 mol%. Highly dense ceramics were obtained, and the relative density reached the maximum value of 96.8%. System densification was attributed to a mass transport mechanism, caused by the presence of Sb 2 O 3 , which could favor the oxygen vacancy apparition. Only phase corresponding to Pr 6 O 11 in the sample was detected within the limit of detection of the XRD technique. The electric measurement indicated that the minor incorporation of Sb 2 O 3 can improve the nonlinear electrical properties. This change was ascribed to the S chottky barriers at interface of grain boundary.

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