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Domain Wall Motion in A and B Site Donor‐Doped Pb ( Zr 0.52 Ti 0.48 ) O 3 Films
Author(s) -
Zhu Wanlin,
Fujii Ichiro,
Ren Wei,
TrolierMcKinstry Susan
Publication year - 2012
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2012.05243.x
Subject(s) - doping , materials science , analytical chemistry (journal) , chemistry , optoelectronics , chromatography
Donor‐doped PbZr 0.52 Ti 0.48 O 3 ( PZT ) films were utilized to study the effect of dopants on the mobility of ferroelectric domain walls. For chemical solution deposited PZT films 2 μm in thickness, doped with 1%–4% Nb or La , the low field dielectric permittivity remained between 1100 and 1300. With increasing Nb concentration, both the reversible and irreversible Rayleigh constants increased from ɛ init and α ′ of 1150 and 39 cm/kV, respectively, for undoped PZT films to 1360 and 43 cm/kV for films doped with 2 mol% Nb . La doping increased the irreversible Rayleigh constant but did not strongly affect the reversible Rayleigh parameter. These observations are consistent with softening of the dielectric and electromechanical response with donor doping.