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Influence of Bi 2 O 3 Doping on Microstructure and Electrical Properties of ZnO – V 2 O 5 – MnO 2 – Nb 2 O 5 Varistor Ceramics
Author(s) -
Nahm ChoonW.
Publication year - 2012
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2012.05230.x
Subject(s) - microstructure , doping , chemistry , analytical chemistry (journal) , materials science , nuclear chemistry , crystallography , chromatography , optoelectronics
This article is a report on the effect of Bi 2 O 3 addition on microstructure and electrical properties of ZnO – V 2 O 5 – MnO 2 – Nb 2 O 5 varistor ceramics. The average grain size increased from 5.6 to 7.2 μm as the Bi 2 O 3 amount increased. Increasing the amount of Bi 2 O 3 decreased the breakdown field from 4874 to 2205 V/cm. The ceramics doped with 0.025 mol% Bi 2 O 3 exhibited a surprisingly high nonlinear coefficient (α = 60) and very low leakage current density ( J L = 20 μA/cm 2 ). In addition, when the Bi 2 O 3 amount increased, the donor concentration increased in the range of 2.38 × 10 17 −8.17 × 10 17 cm −3 and the barrier height exhibited the highest value (1.12 eV) at 0.025 mol% Bi 2 O 3 .