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A New Temperature Stable Microwave Dielectric Material Mg 0.5 Zn 0.5 TiNb 2 O 8
Author(s) -
Liao Qingwei,
Li Lingxia,
Ding Xiang,
Ren Xiang
Publication year - 2012
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2012.05148.x
Subject(s) - sintering , materials science , analytical chemistry (journal) , dielectric , relative density , chemistry , mineralogy , metallurgy , chromatography , optoelectronics
A new temperature stable, low‐loss, low sintering temperature microwave dielectric material Mg 0.5 Zn 0.5 TiNb 2 O 8 was investigated for the first time. Single phase Mg 0.5 Zn 0.5 TiNb 2 O 8 was obtained, and it showed Columbite structure which was tri‐ixiolite structure. The variation trend of dielectric constant was in accordance with variation trend of relative density. When the sintering temperature was lower than 1120°C, the Qf value increased with the increasing of relative density. When the sintering temperature was higher than 1120°C, the Qf value decreased with the increasing of the unit cell volume. With the decrease of bond strength, the τ f increased. The typical values of ε = 30.74, Qf = 66 900 GHz, τ f = −4.01 × 10 −6 /°C were obtained for Mg 0.5 Zn 0.5 TiNb 2 O 8 sintered at 1120°C for 6 h.