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The Application of Bismuth‐Based Oxides in Organic‐Inorganic Hybrid Photovoltaic Devices
Author(s) -
Liu Zhike,
Yan Feng
Publication year - 2012
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2012.05088.x
Subject(s) - bismuth , materials science , heterojunction , semiconductor , optoelectronics , photovoltaic effect , oxide , photovoltaic system , open circuit voltage , pulsed laser deposition , thin film , nanotechnology , voltage , electrical engineering , metallurgy , engineering
Bismuth‐based ferroelectric oxide films including BiFeO 3 , Bi 2 WO 6 and BiVO 4 with different band structure are prepared by pulsed laser deposition method and used as n‐type semiconductors in photovoltaic devices. The oxide films are combined with p‐type organic semiconductor poly(3‐hexylthiophene) to form bilayer heterojunctions and their photovoltaic effects are systematically studied. Compared with some other oxide semiconductors, such as ZnO or TiO 2 , the bismuth‐based oxides exhibit wider absorption spectra and can induce higher external quantum efficiency, open circuit voltage, and power conversion efficiency of the hybrid devices, indicating that bismuth‐based oxides are promising materials for photovoltaic devices.