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Processing Optimization of Lead Magnesium Niobate‐Lead Titanate
Thin Films for Piezoelectric MEMS Application
Author(s) -
Bastani Yaser,
BassiriGharb Nazanin
Publication year - 2012
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2011.05042.x
Subject(s) - materials science , piezoelectricity , dielectric , permittivity , lead titanate , thin film , perovskite (structure) , grain size , ferroelectricity , relative permittivity , mineralogy , microelectromechanical systems , composite material , analytical chemistry (journal) , nanotechnology , chemical engineering , optoelectronics , chemistry , chromatography , engineering
We report processing conditions and electromechanical properties of highly textured, 0.7 Pb ( Mg 1/3 Nb 2/3 ) O 3 –0.3 PbTiO 3 ( PMN–PT ) films, processed via chemical solution deposition on platinized silicon substrates. Textured perovskite seed layers, optimization of heat treatment conditions and Pb content control were studied to obtain pure perovskite PMN–PT films with dense, columnar grains. Highly (100)‐ and (111)‐oriented films, with Lotgering factors between 91% and 97%, and average grain size up to ~430 nm were synthesized on thin PbTiO 3 and Pb ( Zr , Ti ) O 3 seed layers. Overall, (100)‐textured films showed higher dielectric permittivity and saturated d 33,f piezoelectric coefficients. Dense, submicron‐thick, (100)‐oriented films showed low‐field, relative dielectric permittivity of up to ~2850 (tan δ = 0.02) at 1 kHz, and remnant polarization values up to 17.5 μC/cm 2 . The films showed saturated d 33,f piezoelectric coefficients as high as 210 pm/V.