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Fabrication and Properties of High Curie Temperature x BiZn 1/2 Ti 1/2 O 3 –(1− x ) PbTiO 3 Piezoelectric Films by a Sol–Gel Process
Author(s) -
Zhong Caifu,
Guo Limin,
Wang Xiaohui,
Li Longtu
Publication year - 2012
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2011.05024.x
Subject(s) - curie temperature , materials science , sol gel , dielectric , piezoelectricity , microstructure , curie , fabrication , thin film , ferroelectricity , grain size , piezoelectric coefficient , analytical chemistry (journal) , composite material , nanotechnology , optoelectronics , condensed matter physics , chemistry , ferromagnetism , medicine , physics , alternative medicine , pathology , chromatography
The x BiZn 1/2 Ti 1/2 O 3 –(1− x ) PbTiO 3 ( BZT–PT , x = 0.1–0.3) thin films were fabricated on Pt (111)/ Ti / SiO 2 / Si substrates via an aqueous sol–gel method. Highly (100) oriented BZT–PT films with thickness of 600 nm were obtained by introducing PbO seeding layers. Dense uniform microstructures with average grain size of about 50 nm were observed for these films. The dielectric, ferroelectric, and piezoelectric properties of the BZT–PT thin films were investigated. The curie temperature of the BZT–PT films was about 535°C for x = 0.2, and higher than 600°C for x = 0.3. The local effective piezoelectric coefficientd 33*of the (100) oriented BZT–PT films was approximately 40 pm/V for x = 0.3.