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Composite Mg 2 TiO 4 (111)/ MgO (111) Gate Oxide on GaN (001)
Author(s) -
Hsiao ChuYun,
Wu JhihCheng,
Wu HsuanTa,
Shih ChuanFeng
Publication year - 2012
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2011.04947.x
Subject(s) - materials science , composite number , permittivity , capacitor , oxide , annealing (glass) , sputtering , high κ dielectric , dielectric , chemical engineering , nanotechnology , optoelectronics , thin film , composite material , electrical engineering , voltage , metallurgy , engineering
Mg 2 TiO 4 /MgO composite thin films were deposited on GaN (001) as gate oxides. The use of oxygen in sputtering and post‐annealing increased the (111)‐preferring orientation of Mg 2 TiO 4 on GaN (001). Inserting MgO buffer layer slightly decreased the overall dielectric constant, but considerably improved the electrical properties by modifying the band alignment at interface. The relative permittivity, interfacial trap density, and leakage current of the composite layer‐based capacitor were ~17.6, 7.4 × 10 11 eV −1 ·cm −2 , and 4.6 × 10 −8 A/cm 2 (at −2 V), respectively, showing potential application to the GaN ‐based metal‐oxide‐semiconductor capacitor.