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Oxidation Behavior of ZrB 2 –SiC–TaC Ceramics
Author(s) -
Wang Yiguang,
Ma Baisheng,
Li Lulu,
An Linan
Publication year - 2012
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2011.04945.x
Subject(s) - ceramic , materials science , tantalum , hot pressing , silicon carbide , metal , metallurgy , chemical engineering , composite material , engineering
ZrB 2 –SiC–TaC ceramics with different content of TaC were prepared by hot‐pressing at 1800°C in vacuum environment. The oxidation behavior of these ceramics was studied in the temperature range of 1200°C–1500°C in air. It was found that low concentration of TaC (10 vol%) deteriorated the oxidation resistance of ZrB 2 – SiC , while high concentration of TaC (30 vol%) significantly improved the oxidation resistance of the ceramics. Reoxidation experiments indicated that the metallic species (tantalum and/or silicon) diffusing out of the materials into the oxides was initially involved in the controlling process.