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Synthesis and Microwave Dielectric Properties of Sm 2 SiO 5 Ceramics
Author(s) -
Wu Songping,
Jiang Chan,
Mei Youxian,
Tu Weiping
Publication year - 2012
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2011.04935.x
Subject(s) - temperature coefficient , materials science , ceramic , sintering , monoclinic crystal system , dielectric , microwave , analytical chemistry (journal) , phase (matter) , mineralogy , relative density , composite material , crystal structure , crystallography , chemistry , optoelectronics , telecommunications , organic chemistry , chromatography , computer science
The Sm 2 SiO 5 ceramics were synthesized and their microwave dielectric properties were investigated. The pure monoclinic Sm 2 SiO 5 phase could be obtained when the molar ratio of Sm 2 O 3 /SiO 2 was 1:1.05 at 1350°C. A small amount of hexagonal Sm 4 (SiO 4 ) 3 second phase occurred as temperature increased. The relative density of Sm 2 SiO 5 ceramics increased with increasing temperature. The Sm 2 SiO 5 ceramics sintered at 1500°C exhibited microwave dielectric properties: a dielectric constant (ε r ) of 8.44, a quality factor ( Q × f ) of 64 000 GHz, and a temperature coefficient of resonant frequency (τ f ) of −37 ppm/°C. The Sm 2 SiO 5 ceramics have a wide sintering temperature region and small negative τ f values. They are promising candidate materials for millimeter‐wave devices.