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Thickness‐Dependent Dielectric, Ferroelectric, and Magnetodielectric Properties of BiFeO 3 Thin Films Derived by Chemical Solution Deposition
Author(s) -
Tang Xianwu,
Dai Jianming,
Zhu Xuebin,
Lin Jianchao,
Chang Qing,
Wu Dajun,
Song Wenhai,
Sun Yuping
Publication year - 2012
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2011.04920.x
Subject(s) - materials science , multiferroics , dielectric , thin film , ferroelectricity , deposition (geology) , microstructure , crystallization , permittivity , composite material , optoelectronics , nanotechnology , chemical engineering , paleontology , sediment , biology , engineering
Thickness is a very important parameter to control the microstructures, as well as physical properties in the multiferroic BiFeO 3 thin films. In this article, BiFeO 3 thin films with different thickness (from 210 to 830 nm) are fabricated by chemical solution deposition on the Pt/Ti/SiO 2 /Si (100) substrates to investigate the thickness effects systematically. The results show that the crystallization is improved, the dielectric constant is enhanced, and the leakage current is reduced with increasing thickness. On the other hand, the magnetization and magnetodielectric are decreased with thickness. The results show that the optimized thickness should be within the range of 400–600 nm to obtain optimized properties using chemical solution deposition processing, which will provide a useful guidance to prepare the multiferroic BiFeO 3 thin films.

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