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New Low‐Loss Microwave Dielectric Material ZnTiNbTaO 8
Author(s) -
Liao Qingwei,
Li Lingxia,
Ren Xiang,
Ding Xiang
Publication year - 2011
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2011.04815.x
Subject(s) - materials science , microwave , dielectric , octahedron , dielectric loss , atomic packing factor , valence (chemistry) , single phase , phase (matter) , mineralogy , analytical chemistry (journal) , crystal structure , crystallography , chemistry , optoelectronics , physics , organic chemistry , chromatography , quantum mechanics , electrical engineering , engineering
A new low‐loss, low‐temperature sinterable microwave dielectric material ZnTiNbTaO 8 was investigated for the first time. Single phase ZnTiNbTaO 8 was obtained by the conventional solid‐state route and sintered at 1120°C – 1200°C for 6 h. Theoretical density, packing fraction, bond valence, and oxygen octahedron distortion were calculated. The excellent microwave dielectric properties of ε = 36.3, Qf = 67 000 GHz, τ f = − 57.66 × 10 −6 /°C were obtained from the new ZnTiNbTaO 8 materials sintered at 1140°C for 6 h.