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Phase Transformation Properties of Highly (100)‐Oriented PLZST 2/85/12/3 Antiferroelectric Thin Films Deposited on Nb–SrTiO 3 Single‐Crystal Substrates
Author(s) -
Hao Xihong,
Zhai Jiwei,
Yue Zhenxing,
Xu Jinbao
Publication year - 2011
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2011.04736.x
Subject(s) - antiferroelectricity , materials science , thin film , microstructure , dielectric , scanning electron microscope , phase (matter) , single crystal , diffraction , strontium titanate , crystallography , ferroelectricity , nanotechnology , composite material , optoelectronics , optics , chemistry , physics , organic chemistry
In this work, (Pb 0.97 La 0.02 )(Zr 0.85 Sn 0.12 Ti 0.03 )O 3 ( PLZST 2/85/12/3) antiferroelectric ( AFE ) thin films with a thickness of ~700 nm were successfully fabricated on (100)‐oriented Nb–SrTiO 3 single crystal via a sol–gel technique. X ‐ray diffraction and scanning electron microscopy results showed that the obtained AFE films had a highly (100)‐preferred orientation and displayed a uniform surface microstructure. Electrical measurements, such as P – E loops, the electric‐field, and temperature‐dependent dielectric properties, demonstrated a mixture of AFE and FE phases in PLZST 2/85/12/3 films deposited on Nb–SrTiO 3 substrates.