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Optimization of PST Thin Films Grown by Sputtering and Complete Dielectric Performance Evaluation: An Alternative Material for Tunable Devices
Author(s) -
Lei Xiuyun,
Rémiens Denis,
Ponchel Freddy,
Soyer Caroline,
Wang Genshui,
Dong Xianlin
Publication year - 2011
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2011.04683.x
Subject(s) - materials science , lanio , annealing (glass) , figure of merit , dielectric , sputter deposition , thin film , microstructure , sputtering , silicon , electrode , dielectric loss , optoelectronics , composite material , nanotechnology , ferroelectricity , chemistry
Pb x Sr 1‐x TiO 3 ( PST ) thin films with the ratio Pb/Sr = 40/60 were deposited on silicon substrate with Pt or LaNiO 3 ( LNO ) bottom electrodes by radio frequency magnetron sputtering followed by a postannealing treatment. The structural and microstructural analyses were performed and a perovskite phase was obtained whatever the nature of the bottom electrodes and even at a low temperature (450°C). The optimal annealing temperature is 650°C at which the films have a dense and fine microstructure. For electrical characterization the different top electrodes ( Pt and LNO ) were used. In both cases, we demonstrate that PST films present excellent performances in terms of dielectric properties and in particular, the tunability and Figure of Merit. A large tunability (57% at 400 kV/cm) and low dielectric losses (1.4%) were measured at 10 kHz for Pt/PST/Pt structures postannealed at 500°C. For LNO/PST/LNO structures, postannealed at 650°C, the improved tunability (≈80%) and low loss factor (≈2%) were obtained. Prospects of PST as an alternative to BST for tunable applications with a real potentiality of monolithic integration with silicon, in terms of thermal budget, are considered.