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Effects of Processing Parameters on Electrical Properties of p ‐Type Li ‐Doped ZnO Films by DC Pulsed Sputtering
Author(s) -
Chiu KuoChuang,
Jean JauHo
Publication year - 2011
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2011.04624.x
Subject(s) - sputtering , materials science , electrical resistivity and conductivity , crystallinity , substrate (aquarium) , doping , grain size , sputter deposition , evaporation , pulsed dc , analytical chemistry (journal) , optoelectronics , thin film , composite material , nanotechnology , chemistry , electrical engineering , engineering , oceanography , physics , chromatography , geology , thermodynamics
The effects of processing parameters on electrical properties of a p ‐type Li ‐doped ZnO film grown on a glass substrate by dc pulsed sputtering at substrate temperatures of 25°–250°C are investigated. Results show that loss of Li due to high evaporation or low sticking efficiency takes place during sputtering, which becomes more significant with increasing substrate temperature. This in turn increases the electrical resistivity of the film deposited from the same target, although both grain size and crystallinity of Li‐doped ZnO films increase at a higher substrate temperature. A larger electrical resistivity is also observed with increasing flow rate of Ar carrier gas, and decreasing sputtering power as well.