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Microwave Properties of Bi 1.5 Zn 1.0 Nb 1.5 O 7 /Ba 0.6 Sr 0.4 TiO 3 Hetero Layered Films Directly Sputtered on Si up to 50 GHz
Author(s) -
Yang Lihui,
Wang Genshui,
Dong Xianlin,
Ponchel Freddy,
Rémiens Denis
Publication year - 2011
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2011.04610.x
Subject(s) - materials science , dissipation factor , microwave , pyrochlore , permittivity , coplanar waveguide , dielectric loss , optoelectronics , dielectric , sputter deposition , perovskite (structure) , thin film , sputtering , nanotechnology , chemical engineering , telecommunications , computer science , chemistry , organic chemistry , engineering , phase (matter)
Perovskite Ba 0.6 Sr 0.4 TiO 3 ( BST ), pyrochlore Bi 1.5 Zn 1.0 Nb 1.5 O 7 ( BZN ), and hetero layered BZN/BST films have been directly grown on high resistivity ( HR )‐ Si substrates by radio frequency magnetron sputtering. The microwave properties (up to 50 GHz) of all the films are evaluated by fabricating coplanar waveguide configuration. Experimental results showed that the BZN layer helped in tailoring the dielectric constant and reducing the loss tangent significantly. Moreover, the resulting BZN/BST/HR‐Si films show moderate permittivity (~258) and tunability (~15.63%, 200 kV/cm), and low microwave loss (~0.0175) at 2 GHz and their microwave properties (1–50 GHz) potentially could be made suitable for integrated microwave tunable devices.