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Improving the High‐Temperature Oxidation Resistance of Ti 3 (SiAl)C 2 by Nb‐Doping
Author(s) -
Zheng LiLi,
Sun LuChao,
Li MeiShuan,
Zhou YanChun
Publication year - 2011
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2011.04586.x
Subject(s) - materials science , rutile , doping , oxide , metallurgy , chemical engineering , optoelectronics , engineering
A (TiNb) 3 (SiAl)C 2 solid solution was designed and synthesized to improve the high‐temperature oxidation resistance of Ti 3 (SiAl)C 2 . After doping with Nb, the oxidation resistance of Ti 3 (SiAl)C 2 is improved. Its oxidation kinetics follows parabolic behavior up to 1300°C. The oxide scale formed on (TiNb) 3 (SiAl)C 2 is thinner and smaller in grain size than that on Ti 3 (SiAl)C 2 under the same oxidation condition. The beneficial effect of Nb doping on the oxidation resistance of Ti 3 (SiAl)C 2 mainly results from the decreased concentration of oxygen vacancies and titanium interstitials in the rutile form of TiO 2 , and the inhibited generation of excessive voids in the oxide scale.