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Influence of Preparation Conditions on Distinctive Contributions to Dielectric Behavior of CaCu 3 Ti 4 O 12 Thin Films
Author(s) -
Eršte Andreja,
Malic̆ Barbara,
Kužnik Brigita,
Kosec Marija,
Bobnar Vid
Publication year - 2011
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2011.04581.x
Subject(s) - dielectric , materials science , thin film , grain boundary , conductivity , grain size , electrical resistivity and conductivity , high κ dielectric , dielectric loss , permittivity , variable range hopping , composite material , optoelectronics , microstructure , nanotechnology , thermal conduction , electrical engineering , chemistry , engineering
The influence of preparation conditions on dielectric properties of CaCu 3 Ti 4 O 12 (CCTO) thin films was studied by detailed dielectric investigations in a broad temperature and frequency ranges. Experimental results, obtained in various CCTO thin films prepared by chemical solution deposition, and analysis in terms of the equivalent circuit reveal that the preparation conditions govern the distinctive contributions of insulating grain boundaries and semiconducting grains in different temperature and frequency ranges. With proper postannealing process, dielectric constant of ≈3000 was obtained in films with thickness below 500 nm. In addition, the electrical conductivity results reveal that one‐dimensional variable range hopping is the dominating transport mechanism in CCTO thin films.