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Strong Upconversion Photoluminescence and Large Ferroelectric Polarization in Er 3+ –Yb 3+ –W 6+ Triply Substituted Bismuth Titanate Thin Films Prepared by Chemical Solution Deposition
Author(s) -
Gao Feng,
Zhang Qinyuan,
Ding Gangjin,
Qin Ni,
Bao Dinghua
Publication year - 2011
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2011.04568.x
Subject(s) - photoluminescence , materials science , bismuth titanate , ferroelectricity , thin film , photon upconversion , bismuth , pulsed laser deposition , analytical chemistry (journal) , luminescence , dielectric , optoelectronics , nanotechnology , chemistry , chromatography , metallurgy
Strong upconversion photoluminescence and large ferroelectric polarization were observed for the first time in layered structure Er 3+ –Yb 3+ –W 6+ triply substituted bismuth titanate thin films. The thin films were prepared on fused silica and Pt(111)/Ti/SiO 2 /Si substrates by chemical solution deposition. Two green emission bands and a red one were observed in the upconversion photoluminescence spectra for all the films pumped by a 980 nm laser diode, which correspond to 2 H 11/2 , 4 S 3/2 , and 4 F 9/2 to 4 I 15/2 transitions of Er 3+ ions, respectively. A two‐photon energy‐transfer process was confirmed by the power dependence of emission intensity. Compared with that of Er 3+ –Yb 3+ ‐substituted bismuth titanate thin films, the improved photoluminescence is related to the reduced defects such as oxygen vacancies due to B ‐site (Ti 4+ ) substitution by W 6+ ions, while the large ferroelectric remnant polarization can be attributed to the increased structure distortion and the reduced oxygen vacancies due to cosubstitution of A ‐site (Bi 3+ ) and B ‐site (Ti 4+ ) by Er 3+ , Yb 3+ , and W 6+ ions, respectively. The combination of the strong upconversion photoluminescence and the good ferroelectric properties in the thin films would open the possibility of realizing novel multifunctional optoelectronic integration device applications.