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Growth and Electrical Properties of 25%Bi(Ni 1/2 Ti 1/2 )O 3 –75%PbTiO 3 Thin Films on Pt/TiO 2 /SiO 2 /Si Substrates Using Pulsed Laser Deposition Method
Author(s) -
Wu Guangheng,
Zhou Hong,
Qin Ni,
Bao Dinghua
Publication year - 2011
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2011.04555.x
Subject(s) - materials science , thin film , pulsed laser deposition , dielectric , dissipation factor , ferroelectricity , polarization (electrochemistry) , coercivity , perovskite (structure) , permittivity , ceramic , analytical chemistry (journal) , mineralogy , composite material , optoelectronics , nanotechnology , chemical engineering , condensed matter physics , chemistry , physics , chromatography , engineering
We report on growth of 25%Bi(Ni 0.5 Ti 0.5 )O 3 –75%PbTiO 3 (25BNiT–PT) solid solution thin films and good electrical properties such as high remanent polarization, high dielectric constant, and low dissipation factor. The thin films prepared on Pt/TiO 2 /SiO 2 /Si substrates by pulsed laser deposition were well crystallized with a phase‐pure perovskite structure. Well‐saturated P – E hysteresis loops were observed with a much larger remanent polarization than that of corresponding ceramic counterparts reported before in literature. The remanent polarization P r and coercive field E c were 40.9 μC/cm 2 and 117 kV/cm, respectively, for the thin films annealed at 650°C. The thin films had a high dielectric constant of about 400–500 and a low dissipation factor of 0.03 at a frequency of 1 kHz. The good polarization characteristics of the thin films are very significant for high‐temperature ferroelectric device applications.