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Dielectric Properties at Microwaves Frequencies of (Ni, Ti, La, Mg)‐Doped Ba 0.3 Sr 0.7 TiO 3 Thin Films Deposited onHigh‐Resistivity Silicon Substrates
Author(s) -
Ponchel Freddy,
Rémiens Denis,
Midy Jean,
Legier JeanFançois,
Soyer Caroline,
Lasri Tuami,
Guegan Guillaume
Publication year - 2011
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2011.04546.x
Subject(s) - materials science , dissipation factor , electrical resistivity and conductivity , dielectric , doping , silicon , dopant , sputter deposition , permittivity , microwave , thin film , dielectric loss , optoelectronics , coplanar waveguide , sputtering , analytical chemistry (journal) , electrical engineering , nanotechnology , telecommunications , chemistry , engineering , chromatography , computer science
Pure and doped Ba 0.3 Sr 0.7 TiO 3 thin films are deposited by radio frequency magnetron sputtering with the in situ process on high‐resistivity silicon substrates. We have studied four dopants: La, Ti, Mg, and Ni with different concentrations from 1 to 5 mol%. Permittivity, dielectrics losses, and tunability are determined up to 60 GHz using a coplanar waveguide. This study highlights the difficulty to improve these electrical properties simultaneously, in particular the loss tangent and the tunability. The best improvement is obtained in case of 5 mol% La for which the losses are in the order of 7.4%, the tunability and the figure of merite are around 29% and 3.9%, respectively, at 60 GHz.