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Textured Magnesium Titanate as Gate Oxide for GaN‐Based Metal‐Oxide‐Semiconductor Capacitor
Author(s) -
Hsiao ChuYun,
Shih ChuanFeng,
Chien ChihHua,
Huang ChengLiang
Publication year - 2011
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2011.04439.x
Subject(s) - materials science , oxide , capacitor , sputtering , spinel , optoelectronics , ceramic , titanium oxide , metal , thin film , semiconductor , epitaxy , magnesium , permittivity , dielectric , chemical engineering , metallurgy , composite material , nanotechnology , electrical engineering , layer (electronics) , voltage , engineering
We demonstrate the first high‐permittivity ceramic oxide for use as the gate oxide of the GaN‐based metal‐oxide‐semiconductor (MOS) capacitor. An ilmenite magnesium titanate (MgTiO 3 ) thin film prepared by sputtering was studied. When oxygen was introduced during sputtering, the preferred orientation changed from spinel Mg 2 TiO 4 (111) to ilmenite MgTiO 3 (003). The X‐ray diffractometry θ−2θ and φ‐scans were performed to identify the preferred films. Possible epitaxial relationships at the Mg 2 TiO 4 (111)/GaN (001) and MgTiO 3 (003)/GaN (001) interfaces were proposed. Finally, the electrical properties of the Al/MgTiO 3 (003)/GaN (001)/Al MOS capacitor were presented.