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Effect of Temperature on the Microstructure of Boron Nitride Formed In Situ on Chemical Vapor‐Deposited Boron in Ammonia Gas
Author(s) -
Li Siwei,
Zhang Litong,
Ye Fang,
Liu Yongsheng,
Cheng Laifei,
Feng Zude,
Chen Lifu
Publication year - 2011
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2010.04386.x
Subject(s) - boron nitride , boron , x ray photoelectron spectroscopy , chemical vapor deposition , microstructure , materials science , nitride , transmission electron microscopy , layer (electronics) , ammonia , thin film , in situ , diffusion , hexagonal boron nitride , chemical engineering , analytical chemistry (journal) , inorganic chemistry , metallurgy , chemistry , nanotechnology , physics , graphene , organic chemistry , engineering , thermodynamics , chromatography
Boron nitride thin layers are in situ fabricated on chemical vapor‐deposited boron in ammonia gas. Characterization by X‐ray photoelectron spectroscopy and transmission electron microscopy reveals that the nitridation is dominated by different processes with varying temperatures. Below 1300°C the surface reaction is in control and leads to the formation of uniformly thin layer with mostly sp 3 boron nitride. As the temperature rises, the nitridation is gradually turned as a diffusion‐determining process, after which a thicker but uneven layer with hexagonal sp 2 boron nitride is produced.