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Sol–Gel Derived ZnO‐Doped Zr 0.8 Sn 0.2 TiO 4 Thin Films on Indium Tin Oxide/Glass Substrate
Author(s) -
Hsu ChengHsing,
Chung ChingYi
Publication year - 2011
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2010.04320.x
Subject(s) - materials science , indium , doping , indium tin oxide , substrate (aquarium) , sol gel , tin , thin film , tin oxide , chemical engineering , mineralogy , metallurgy , nanotechnology , chemistry , optoelectronics , oceanography , geology , engineering
In this study, the electrical properties, optical properties, and microstructures of 1 wt% ZnO‐doped (Zr 0.8 Sn 0.2 )TiO 4 thin films prepared by the sol–gel method on various heat‐treatment temperatures and heat‐treatment times were examined. The surface structural and morphological characteristics analyzed by X‐ray diffraction, scanning electron microscopy, and atomic force microscope were sensitive to the deposition conditions, such as heat‐treatment time (15–60 min) and heat‐treatment temperature (250–450°C). All the films exhibited ZnO‐doped (Zr 0.8 Sn 0.2 )TiO 4 (111) and (101) orientations perpendicular to the substrate surface, and the grain size was increased with increasing heat‐treatment temperature and time. The optical transmittance spectroscopy further revealed high transparency (over 80%) in the wavelength range of 400–800 nm of visible region. At a heat‐treatment temperature level of 250°C and a heat‐treatment time of 15 min, the ZnO‐doped Zr 0.8 Sn 0.2 TiO 4 films were found to possess a dielectric constant of 21 (at 1 MHz), a dissipation factor of 0.23 (at 1 MHz), and a leakage current density of 1.87 × 10 −8 A/cm 2 at an electrical field of 50 V/cm.