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Production of Ni‐Doped SiC Nanopowders and their Dielectric Properties
Author(s) -
Li Dan,
Jin HaiBo,
Cao MaoSheng,
Chen Tao,
Dou YanKun,
Wen Bo,
Agathopoulos Simeon
Publication year - 2011
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2010.04293.x
Subject(s) - materials science , silicon carbide , combustion , dielectric , microstructure , nickel , chemical engineering , doping , carbide , grain size , pyrolysis , silicon , composite material , analytical chemistry (journal) , metallurgy , optoelectronics , chemistry , organic chemistry , engineering
Nanopowders of nickel‐doped β‐silicon carbide (β‐SiC) with improved dielectric properties (compared with pure β‐SiC) were successfully produced using the mechanically activated self‐propagating high‐temperature synthesis method in an argon (Ar) atmosphere. The molar substitution of nickel (Ni) for silicon (Si) was 1%, 3%, and 5%. Powders of poly(tetrafluoroethylene) and ammonium chloride (NH 4 Cl) were used to promote the combustion reaction. The experimental results indicated an active role of Ni in the mechanism of combustion synthesis of SiC powders, which was reflected in the increase in combustion temperature and the velocity of propagation of the combustion wave, the microstructure of the produced nanopowders with a grain size of 100 nm for 5% Ni, and an improvement in the dielectric properties, specifically the increase in real (ɛ′) and imaginary parts (ɛ″) of the complex permittivity, in the frequency range of 8.2–12.4 GHz, compared with pure SiC. The X‐ray analysis of the produced powders suggests that Ni is accommodated in the lattice of SiC, which shrinks with increasing amounts of Ni.