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Ultra‐Low‐Temperature Sintering of Nanostructured β‐SiC
Author(s) -
Lee JinSeok,
Ahn YoungSoo,
Nishimura Toshiyuki,
Tanaka Hidehiko,
Lee SeaHoon
Publication year - 2011
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2010.04269.x
Subject(s) - sintering , spark plasma sintering , materials science , grain boundary , grain boundary diffusion coefficient , diffusion , relative density , grain size , metallurgy , grain growth , decomposition , composite material , microstructure , physics , thermodynamics , ecology , biology
A nanostructured SiC was successfully obtained through the decomposition of Al 4 SiC 4 additive during spark plasma sintering at the lowest temperature so far published under the pressing condition of below 121 MPa. The specimen had a relative density of 95% after sintering at 1450°C, and nearly full densification with a grain size of around 70 nm was achieved at 1500°C. Heavy Al segregation occurred at the grain boundaries, which caused the low‐temperature sintering most presumably by promoting grain‐boundary diffusion.