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Fabrication and Characterization of ZnNb 2 O 6 Thin Films Using Sol–Gel Method
Author(s) -
Hsu ChengHsing,
Yan ShuFong
Publication year - 2011
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2010.04174.x
Subject(s) - materials science , annealing (glass) , microstructure , thin film , crystallite , scanning electron microscope , dielectric , grain size , band gap , diffraction , analytical chemistry (journal) , fabrication , optics , optoelectronics , composite material , nanotechnology , chemistry , metallurgy , physics , chromatography , medicine , alternative medicine , pathology
Electrical, optical properties, and microstructures of ZnNb 2 O 6 thin films prepared using the sol–gel method on ITO/glass substrates at different annealing temperatures have been investigated. The surface structural and morphological characteristics analyzed by X‐ray diffraction, scanning electron microscopy, and atomic force microscope were found to be sensitive to the deposition conditions, such as annealing temperature (500°–700°C). Optical properties of the ZnNb 2 O 6 thin films were obtained using UV‐visible recording spectrophotometer. The selected‐area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited ZnNb 2 O 6 (031), (131), (060), and (162) orientation perpendicular to the substrate surface and the grain size with the increase in the annealing temperature. At an annealing temperature of 700°C, the ZnNb 2 O 6 films with 55 nm thickness possess a dielectric constant of 24 at 1 kHz, a dissipation factor of 0.16 at 1 kHz, a leakage current density of 7.04 × 10 −6 A/cm 2 at an electrical field of 30 kV/cm, and an optical bandgap of 3.9 eV.