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Nitrogen Gas Pressure Synthesis and Photoluminescent Properties of Orange‐Red SrAlSi 4 N 7 :Eu 2+ Phosphors for White Light‐Emitting Diodes
Author(s) -
Ruan Jian,
Xie RongJun,
Hirosaki Naoto,
Takeda Takashi
Publication year - 2011
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2010.04104.x
Subject(s) - phosphor , photoluminescence , analytical chemistry (journal) , excited state , materials science , nitride , luminescence , emission intensity , quantum efficiency , light emitting diode , diode , chemistry , optoelectronics , atomic physics , nanotechnology , physics , chromatography , layer (electronics)
Nitride phosphor SrAlSi 4 N 7 :Eu 2+ was synthesized by gas pressure sintering of powder mixtures of Sr 3 N 2 , AlN, α‐Si 3 N 4 , and EuN at 1750°C under 0.48 MPa N 2 . The photoluminescent properties of SrAlSi 4 N 7 :Eu 2+ were measured and analyzed. Two‐peak emission from Eu 2+ located at two different Sr sites in the SrAlSi 4 N 7 host structure was observed. When the phorphors were excited at 410 nm, the highest emission intensity was found to be ∼126% of that in YAG:Ce 3+ excited at 460 nm. The highest relative emission intensity at 150°C was ∼84.6% of that at 30°C. The highest external quantum efficiency acheived was 58.5%. SrAlSi 4 N 7 :Eu 2+ ‐based phosphors are potential for white light‐emitting diodes.