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Enhancement of Ferroelectricity in Neodymium‐ and Vanadium‐Codoped Na 0.5 Bi 4.5 Ti 4 O 15 Thin Films
Author(s) -
Do Dalhyun,
Kim Jin Won,
Kim Sang Su
Publication year - 2010
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2010.04080.x
Subject(s) - thin film , materials science , ferroelectricity , coercivity , polarization (electrochemistry) , vanadium , crystallization , pulsed laser deposition , electric field , analytical chemistry (journal) , capacitor , dielectric , optoelectronics , voltage , nanotechnology , metallurgy , condensed matter physics , chemical engineering , chemistry , electrical engineering , physics , chromatography , quantum mechanics , engineering
Ferroelectric Na 0.5 Bi 3.99 Nd 0.5 Ti 3.97 V 0.03 O 15 (NaBNdTiV) thin films were prepared by a chemical solution deposition method and annealed at 750°C under oxygen atmosphere for crystallization. Compared with Na 0.5 Bi 4.5 Ti 4 O 15 thin films, the NaBNdTiV thin films exhibit better ferroelectric properties. The values of remnant polarization (2 P r ) and coercive field (2 E c ) of the NaBNdTiV thin‐film capacitor were 54 μC/cm 2 and 248 kV/cm at an applied electric field of 652 kV/cm, respectively. The NaBNdTiV thin film showed good fatigue endurance. An 8% decrease in switchable polarization was observed after 1.44 × 10 10 cycles. Leakage current density of the NaBNdTiV thin‐film capacitor was 8.07 × 10 −7 A/cm at 100 kV/cm.