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Combined Jonker and Ioffe Analysis of Oxide Conductors and Semiconductors
Author(s) -
Zhu Qimin,
Hopper E. Mitchell,
Ingram Brian J.,
Mason Thomas O.
Publication year - 2011
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2010.04047.x
Subject(s) - seebeck coefficient , thermoelectric effect , materials science , semiconductor , oxide , figure of merit , thermoelectric materials , electrical resistivity and conductivity , conductivity , ceramic , electrical conductor , thermoelectric generator , condensed matter physics , optoelectronics , thermal conductivity , thermodynamics , chemistry , metallurgy , electrical engineering , composite material , physics , engineering
Jonker plots (Seebeck coefficient versus logarithm of conductivity) have been utilized to obtain the product of the density of states (DOS) and mobility (μ) in oxide semiconductors, from which the maximum electrical conductivity can be estimated for degenerate transparent conducting oxide (TCO) applications. In addition, the DOS–μ product can be utilized to predict the maximum achievable “power factor” ( PF , Seebeck coefficient squared times conductivity) for oxide semiconductors. The PF is an important parameter governing the figure of merit for thermoelectric oxide (TEO) applications. The procedure employs an analysis developed by Ioffe, and provides an important screening tool for oxide (and other) thermoelectric materials, based upon data from polycrystalline ceramic specimens. Several oxides, including known transparent conductors, are considered as TCO and TEO case studies in the present work.