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Effects of Manganese Doping on the Dielectric Properties of Titanium Dioxide Ceramics
Author(s) -
Chao Sheng,
Dogan Fatih
Publication year - 2011
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2010.04039.x
Subject(s) - dielectric , materials science , grain boundary , doping , dielectric spectroscopy , conductivity , manganese , titanium dioxide , dielectric loss , ceramic , titanium , analytical chemistry (journal) , electrical resistivity and conductivity , grain size , mineralogy , metallurgy , microstructure , chemistry , electrode , electrochemistry , optoelectronics , electrical engineering , chromatography , engineering
Dielectric properties of undoped and manganese (Mn)‐doped titanium dioxide (TiO 2 ) ceramics were measured by various test methods including impedance spectroscopy techniques. It was found that direct current conductivity and dielectric loss were effectively suppressed by small amount (∼0.05 mol%) of Mn doping due to generation of possible electron traps. Further increase of Mn content led to formation of oxygen vacancies and increase of dielectric loss. Increased grain‐boundary resistivity was observed as Mn‐doping concentration increases, presumably due to segregation of Mn solutes at the grain boundaries. Larger difference between the grain and grain‐boundary conductivity gave rise to space charge polarization. It was shown that TiO 2 ceramics with optimum amount of Mn‐doping concentration possess good dielectric properties that are suitable for energy storage applications.