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Spin‐Coating‐Derived Gold‐Nanoparticle Memory
Author(s) -
Leu ChingChich,
Chen ShihTang,
Liu FuKen
Publication year - 2010
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2010.03858.x
Subject(s) - materials science , spin coating , nanocrystal , nanoparticle , oxide , coating , silicon , layer (electronics) , nanotechnology , colloid , silicon oxide , chemical engineering , optoelectronics , metallurgy , silicon nitride , engineering
A metal–oxide–semiconductor (MOS) capacitor embedded with gold nanoparticles (Au NPs) has been successfully fabricated by a spin‐coating‐derived chemical solution process. The colloidal synthesized Au NPs (∼3.5 nm) were self‐assembled to 3‐aminopropyltrimethoxysilane‐modified silicon oxide substrates. With the spin‐coating process, Au NPs can be fabricated onto silicon oxide with a high packing density of 1.6 × 10 12 cm −2 in a short processing time. The sol–gel‐derived HfO 2 layer, acting as a control oxide, was also spin coated to construct an Si/SiO 2 /Au NPs/HfO 2 structure. This MOS structure showed good memory effect and retention properties. This study indicates that it is appropriate to utilize the spin‐coating process in nanocrystal memory applications.