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Ferroelectric and Impedance Behavior of La‐ and Ti‐Codoped BiFeO 3 Thin Films
Author(s) -
Wu Jiagang,
Wang John
Publication year - 2010
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2010.03816.x
Subject(s) - materials science , ferroelectricity , thin film , lanio , ohmic contact , analytical chemistry (journal) , electric field , curie temperature , band gap , polarization (electrochemistry) , coercivity , dielectric , condensed matter physics , composite material , ferromagnetism , nanotechnology , optoelectronics , chemistry , layer (electronics) , chromatography , quantum mechanics , physics
To study the effects of La and Ti cosubstitutions on ferroelectric and impedance behavior of BiFeO 3 , (Bi 0.90 La 0.10 )FeO 3 , Bi(Fe 0.95 Ti 0.05 )O 3 , and (Bi 0.90 La 0.10 )(Fe 0.95 Ti 0.05 )O 3 thin films were deposited on LaNiO 3 ‐buffered Pt/TiO 2 /SiO 2 /Si(100) substrates by off‐axis radio frequency sputtering. The (Bi 0.90 La 0.10 )(Fe 0.95 Ti 0.05 )O 3 thin film exhibits an Ohmic conduction behavior in the range of the electric field investigated, and its leakage current at high electric fields is greatly suppressed. The Curie temperature of (Bi 0.90 La 0.10 )(Fe 0.95 Ti 0.05 )O 3 decreases to ∼690°C due to La and Ti cosubstitutions, and a direct band gap of 2.88 eV is identified for the (Bi 0.90 La 0.10 )(Fe 0.95 Ti 0.05 )O 3 thin film, demonstrating the increase of a direct band gap with La and Ti codoping. A high remanent polarization (2 P r ∼102.6 μc/cm 2 and 2 E c ∼538.0 kV/cm) as confirmed by positive up negative down was obtained for the (Bi 0.90 La 0.10 )(Fe 0.95 Ti 0.05 )O 3 thin film at room temperature because of the great inhibition of the leakage current density at high electric fields. The La and Ti cosubstitutions also improve the fatigue behavior of BiFeO 3 thin film. Impedance analyses at different temperatures and frequencies show that the La‐ and Ti‐codoped BFO thin film exhibits rather different dielectric relaxation and conduction mechanism as compared with those of the undoped and La‐ or Ti‐doped BFO thin films, where oxygen vacancies appear to be involved in the dielectric relaxation and conduction processes of these thin films.