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Low‐Temperature Sintering Microwave Dielectrics Using CuO‐Doped Zn(Nb 0.95 Ta 0.05 ) 2 O 6 Ceramics
Author(s) -
Huang ChengLiang,
Chen JhihYong,
Jiang ChangYang
Publication year - 2010
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2010.03786.x
Subject(s) - sintering , materials science , ceramic , analytical chemistry (journal) , liquid phase , dielectric , doping , phase (matter) , mineralogy , metallurgy , chemistry , physics , optoelectronics , organic chemistry , chromatography , thermodynamics
The effect of CuO additions on the sintering behavior and microwave dielectric properties of Zn(Nb 0.95 Ta 0.05 ) 2 O 6 ceramic and its chemical compatibility with Ag have been investigated. The CuO addition can effectively lower the sintering temperature of Zn(Nb 0.95 Ta 0.05 ) 2 O 6 ceramics to 930°C due to the liquid phase effect. The (ZnCu 2 )(Nb 0.95 Ta 0.05 ) 2 O 8 liquid phase will be separated out and exists as a crystalline phase in the final stage. In addition to the (ZnCu 2 )(Nb 0.95 Ta 0.05 ) 2 O 8 liquid phase, a second phase Zn 3 (Nb 0.95 Ta 0.05 ) 2 O 8 is also detected during the synthesis of specimen. Both phases show a relatively low ɛ r and Q × f values compared with that of simple Zn(Nb 0.95 Ta 0.05 ) 2 O 6 . The Q × f value is a function of the sintering temperature and the amount of CuO addition. With 4.5 wt% CuO addition, it varies from 8500 to 77 200 GHz as the sintering temperature increases from 840° to 930°C for 2 h. For low‐firing multilayer applications, a combination of dielectric properties with an ɛ r of ∼22.87, a Q × f of ∼77 200 GHz, and a τ f of ∼−70.8 ppm/°C can be achieved for 4.5 wt% CuO‐doped Zn(Nb 0.95 Ta 0.05 ) 2 O 6 ceramic sintered at 930°C for 2 h.