Premium
Effect of Annealing Temperature on Dielectric Relaxation and Raman Scattering of 0.65Pb(Mg 1/3 Nb 2/3 )O 3 −0.35PbTiO 3 System
Author(s) -
Hou Yudong,
Wu Ningning,
Wang Chao,
Zhu Mankang,
Song Xuemei
Publication year - 2010
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2010.03785.x
Subject(s) - annealing (glass) , dielectric , raman scattering , materials science , analytical chemistry (journal) , raman spectroscopy , scattering , relaxation (psychology) , mineralogy , nuclear magnetic resonance , chemistry , optics , optoelectronics , physics , metallurgy , psychology , social psychology , chromatography
The influences of annealing temperature on the phase transition, dielectrical, and ferroelectric response of 0.65Pb(Mg 1/3 Nb 2/3 )O 3 −0.35PbTiO 3 (PMN−35PT) have been investigated in detail. X‐ray diffraction combined with Raman spectra analysis indicated that the samples annealed below 1100°C show a complete perovskite structure while at higher temperature, the volatilization of PbO results in the formation of the pyrochlore phase. The relative intensity I 740 / I 800 of A 1g mode increased with the increase of annealing temperature, indicating the phase transition to the tetragonal side. The annealing can eliminate the grain‐boundary layer, release the internal stress, and improve the homogeneous distribution of polar nanoregions, resulting in the increase of dielectric constants and the decrease of relaxor behavior. Moreover, the squareness R sq from the P – E hysteresis loop displayed the enhanced trend with the increase of annealing temperature, which can be attributed to the descending of B‐site cation order.