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Dielectric Properties of Low‐Firing Bi 2 Mo 2 O 9 Thick Films Screen Printed on Al Foils and Alumina Substrates
Author(s) -
Liu Weihong,
Wang Hong,
Zhou Di,
Li Kecheng
Publication year - 2010
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2010.03719.x
Subject(s) - materials science , screen printing , dielectric , relative permittivity , ceramic , phase (matter) , permittivity , composite material , dielectric loss , microwave , atmospheric temperature range , sintering , thin film , analytical chemistry (journal) , optoelectronics , nanotechnology , chemistry , physics , organic chemistry , quantum mechanics , meteorology , chromatography
Low‐firing Bi 2 Mo 2 O 9 thick films with a thickness of 15–20 μm were screen printed on Al foils and alumina substrates by screen‐printing technology. The phase evolution, morphologies, and dielectric properties of the thick films were investigated. The thick films showed a pure Bi 2 Mo 2 O 9 phase at temperatures below 610°C. A mixture of Bi 2 MoO 6 , Bi 2 Mo 3 O 12 , and Bi 2 Mo 2 O 9 phases was found in the thick films sintered at 610°C and higher temperatures. The Bi 2 Mo 2 O 9 thick films on Al foils sintered at 645°C showed excellent dielectric properties with a relative permittivity of 38 and a dielectric loss of 0.7% at 5 MHz. At the microwave frequency range from 5 to 19 GHz, the Bi 2 Mo 2 O 9 thick films on alumina substrates sintered at 645°C had a relative permittivity of ∼35 and Q × f of ∼12 500 GHz. It indicates that the Bi 2 Mo 2 O 9 composition as potentially useful for low‐temperature cofired ceramic using Al electrode.