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Investigation on Thermal Conductivity of Aluminum Nitride Ceramics by FT‐Raman Spectroscopy
Author(s) -
Lee HyeonKeun,
Kim Do Kyung
Publication year - 2010
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2010.03704.x
Subject(s) - raman spectroscopy , materials science , thermal conductivity , nitride , ceramic , crystallite , yttria stabilized zirconia , analytical chemistry (journal) , conductivity , aluminium , sintering , phonon , impurity , mineralogy , composite material , metallurgy , chemistry , condensed matter physics , optics , cubic zirconia , physics , layer (electronics) , chromatography , organic chemistry
FT‐Raman spectroscopy was used to characterize the thermal conductivity of yttria‐doped polycrystalline aluminum nitride (AlN) ceramics. Specimens with different thermal conductivity were prepared using sintering additives of different size, content, and mixing method. The broadening of the Raman mode is caused by point defects and impurities, which affect the thermal conductivity of the AlN grains (lattice thermal conductivity). The width of the Raman line was related to the c ‐axis lattice parameter contraction, which was caused by aluminum vacancies produced by various defects. A correlation is suggested between the width of the E 2 (high) phonon mode and the lattice thermal conductivity of AlN ceramics.