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Relevance of the Percentage of Active Barriers in the Dielectric Response of CaCu 3 Ti 4 O 12 Ceramics
Author(s) -
Leret Pilar,
De La Rubia Miguel Ángel,
Romero Juan José,
Fernández José Francisco
Publication year - 2010
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2010.03641.x
Subject(s) - rectification , dielectric , sintering , materials science , capacitor , ceramic , barrier layer , high κ dielectric , work (physics) , composite material , condensed matter physics , mineralogy , layer (electronics) , optoelectronics , thermodynamics , electrical engineering , chemistry , voltage , engineering , physics
In this work, ceramic CaCu 3 Ti 4 O 12 has been prepared by a conventional solid‐state route. The samples present rectifying properties. The study of the I – V curve with the sintering time shows an evolution of the nonlinear coefficient and the increase of barriers suitable to rectify. The dielectric constant increases with the sintering time, following the same trend observed for the number of rectifying barriers. This suggests the existence of a close relation between the barriers that produce electric rectification and the insulating barriers producing the high dielectric constant by the insulating barrier layer capacitor effect.