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Fabrication of p ‐Type Li‐Doped ZnO Films by RF Magnetron Sputtering
Author(s) -
Chiu KuoChuang,
Kao YiWen,
Jean JauHo
Publication year - 2010
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2010.03636.x
Subject(s) - materials science , electrical resistivity and conductivity , sputter deposition , sputtering , analytical chemistry (journal) , doping , substrate (aquarium) , lithium (medication) , dissolution , nitric acid , hall effect , mineralogy , inorganic chemistry , thin film , chemical engineering , metallurgy , chemistry , optoelectronics , nanotechnology , medicine , oceanography , engineering , chromatography , endocrinology , geology , electrical engineering
The p ‐type Li‐doped ZnO films are successfully deposited on a glass substrate by RF magnetron sputtering at room temperature. The pure, crystalline sputtering target of Li X Zn 1− X O 1− X /2 with X in the range of 0–0.003 is fabricated using the powder synthesized by the thermal decomposition of a metal–nitrate–tartrate gel complex at 400°–800°C. The complex is prepared by dissolving nitrates of zinc and lithium in an aqueous solution with nitric and tartaric acids. The resulting compacts, which can be densified at 1400°C, exhibit a decreasing trend of electrical resistivity with increasing Li content. For the composition with 0.2 mol% Li, the p ‐type Li‐doped ZnO film has an electrical resistivity of 1.3 Ω·cm, Hall mobility of 0.77 cm 2 ·(V·s) −1 , carrier concentration of 6.67 × 10 18 cm −3 , and high optical transmittance in the visible region.