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Growth and Electric Properties of MPB BiScO 3 –PbTiO 3 Thin Films on La 0.7 Sr 0.3 MnO 3 ‐Coated Silicon Substrates
Author(s) -
Zhang Shuai,
Dong Xianlin,
Chen Ying,
Cao Fei,
Zhang Yuanyuan,
Wang Genshui,
Sama Nossikpendou,
Remiens Denis
Publication year - 2010
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2010.03630.x
Subject(s) - materials science , phase boundary , dielectric , coercivity , analytical chemistry (journal) , thin film , polarization (electrochemistry) , piezoelectric coefficient , dielectric loss , piezoelectricity , perovskite (structure) , mineralogy , condensed matter physics , phase (matter) , composite material , crystallography , nanotechnology , chemistry , optoelectronics , physics , organic chemistry , chromatography
Morphotropic phase boundary BiScO 3 –PbTiO 3 (BSPT) thin films were fabricated using La 0.7 Sr 0.3 MnO 3 (LSMO) as bottom electrodes on silicon substrates via a sol–gel method. Pt/BSPT/Pt systems were also prepared as the comparison. Both BSPT and LSMO were well crystallized and pure perovskite phases were observed through the X‐ray diffraction measurement. Well‐saturated polarization hysteresis loops were obtained. A much bigger remanent polarization ( P r ) of BSPT/LSMO was acquired than that of BSPT/Pt. The remanent polarization and coercive field of BSPT/LSMO were 28 μC/cm 2 and 200 kV/cm, respectively. The films had a room‐temperature dielectric constant of 720. The room‐temperature piezoelectric coefficient d 33 of 35 pm/V was observed, which was better than that of BPST/Pt that had been reported.