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BiFeO 3 Thin Films Deposited on LaNiO 3 ‐Buffered SiO 2 /Si Substrate
Author(s) -
Wu Jiagang,
Wang John
Publication year - 2010
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2009.03579.x
Subject(s) - lanio , materials science , thin film , ferroelectricity , sputtering , texture (cosmology) , dielectric , substrate (aquarium) , layer (electronics) , analytical chemistry (journal) , optoelectronics , composite material , mineralogy , nanotechnology , chemistry , oceanography , chromatography , artificial intelligence , geology , computer science , image (mathematics)
The BiFeO 3 (BFO) thin films that were successfully grown on the LaNiO 3 (LNO)‐buffered SiO 2 /Si(100) substrate by off‐axis radio frequency sputtering demonstrate enhanced electrical behavior, which are attributed to the well‐grown dense film texture at temperatures around 650°C. The LNO buffer layer promoted the growth of BFO film texture, leading to a lowered leakage current, although too high a deposition temperature gave rise to a defective film texture. The ferroelectric behavior of these BFO thin films are therefore strongly dependent on the film deposition temperature, whereby an improved polarization is observed for the film deposited at 650°C. On the basis of the temperature‐ and frequency‐dependent impedance studies, oxygen vacancies are shown to be involved in the conduction and dielectric relaxation of BFO thin films.