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Photo‐Physical Behaviors of Efficient Green Phosphor Ba 2 MgSi 2 O 7 :Eu 2+ and Its Application in Light‐Emitting Diodes
Author(s) -
Zhang Xinguo,
Zhang Jilin,
Wang Rui,
Gong Menglian
Publication year - 2010
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2009.03549.x
Subject(s) - phosphor , light emitting diode , electroluminescence , materials science , diode , optoelectronics , quenching (fluorescence) , excited state , luminescence , green light , analytical chemistry (journal) , optics , chemistry , fluorescence , layer (electronics) , nanotechnology , atomic physics , blue light , physics , chromatography
An efficient green phosphor, Ba 2 MgSi 2 O 7 :Eu 2+ , was prepared by a solid‐state reaction. Excited by 350–420 nm light, the phosphor shows a strong and broad emission band centering at 505 nm. The concentration quenching mechanism was verified to be a dipole–dipole interaction and the critical energy‐transfer distance was confirmed as around 20 Å by both the calculated crystal structure method and the experimental spectral method. This phosphor shows a low thermal‐quenching property with an activation energy of 0.677 eV. Light‐emitting diodes (LEDs) were fabricated with Ba 2 MgSi 2 O 7 :0.07Eu 2+ and 395‐nm‐emitting InGaN chips and exhibited strong wide‐band green emission and relatively stable current‐dependent electroluminescence properties, indicating that this phosphor is a promising candidate as a green component for the fabrication of white LEDs.