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High Dielectric Composition in the System Sn‐Modified (1−x)BaTiO 3 –xBa(Cu 1/3 Nb 2/3 )O 3 , x=0.025 for Multilayer Ceramic Capacitors
Author(s) -
Maurya Deepam,
Ahn CheolWoo,
Zhang Shujun,
Priya Shashank
Publication year - 2010
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2009.03523.x
Subject(s) - dielectric , materials science , analytical chemistry (journal) , curie temperature , dielectric loss , doping , dissipation factor , solid solution , grain size , mineralogy , x ray crystallography , crystallography , diffraction , chemistry , metallurgy , ferromagnetism , condensed matter physics , optics , physics , optoelectronics , chromatography
We report the synthesis and characterization of BaTiO 3 (BT)‐based high dielectric compositions that are promising for Y5V‐type multilayer ceramic capacitors. A solid solution with a nominal composition (1− x )BaTiO 3 – x Ba(Cu 1/3 Nb 2/3 )O 3 (BCN) ( x =0, 0.025) was synthesized by conventional mixed oxide route, followed by compositional modification with varying concentration of Sn, as given by the formulation: 0.975 BaTi 1− y Sn y O 3 –0.025 Ba(Cu 1/3 Nb 2/3 )O 3 ( y =0.05, 0.06, 0.075, 0.1). Room‐temperature (RT) X‐ray diffraction patterns showed a decrease in the tetragonality of BT after modifying with BCN (BTBCN). Modifications with Sn lead to a further decrement in tetragonality and the RT structure became cubic at 6.0 at.% doping level. The decrement in tetragonality was accompanied by lowering of Curie temperature ( T c ). BTBCN doped with 6 and 7.5 at.% Sn were found to exhibit diffuse phase transition accompanied by a high dielectric constant ≥7000, a low loss tangent ≤1% and a grain size in the submicrometer regime (≤1 μm).