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Large Piezoelectric Coefficient in Tb‐Doped BiFeO 3 Films
Author(s) -
Chen Xuemei,
Hu Guangda,
Wu Weibing,
Yang Changhong,
Wang Xi,
Fan Suhua
Publication year - 2010
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2009.03511.x
Subject(s) - materials science , crystallite , doping , multiferroics , hysteresis , indium , piezoelectricity , piezoelectric coefficient , thin film , indium tin oxide , diffraction , analytical chemistry (journal) , magnetization , remanence , oxide , condensed matter physics , mineralogy , composite material , ferroelectricity , nanotechnology , metallurgy , optics , dielectric , chemistry , optoelectronics , physics , chromatography , quantum mechanics , magnetic field
Polycrystalline BiFeO 3 and Bi 1− x Tb x FeO 3 (BTFO) ( x =0.05–0.16) thin films were deposited on indium tin oxide/glass substrates via a metal organic deposition method. The influence of Tb doping content on the structure and multiferroic properties was investigated. X‐ray diffraction results reveal that there may exist a structure transition around x =0.11 in the BTFO system. Well‐saturated and rectangular P–E hysteresis loops can be observed in all BTFO films. The BTFO x =0.11 film exhibits the maximum values of the remanent out‐of‐plane piezoelectric coefficient ( d 33 = 140 pm/V) and saturated magnetization ( M s =22.2 emu/cm 3 ).