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Nonoxide Sol–Gel Synthesis of Terbium‐Doped Silicon Nitride Phosphors
Author(s) -
Hassan Shereen,
Carravetta Marina,
Hector Andrew L.,
Stebbings Laura A.
Publication year - 2010
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2009.03499.x
Subject(s) - phosphor , terbium , photoluminescence , materials science , silicon nitride , electroluminescence , sol gel , amorphous solid , doping , luminescence , nitride , silicon , ammonia , chemical engineering , inorganic chemistry , chemistry , nanotechnology , optoelectronics , layer (electronics) , crystallography , organic chemistry , engineering
Exposure of solutions of Tb(N(SiMe 3 ) 2 ) 3 with SiCl(NEt 2 ) 3 in tetrahydrofuran to dry ammonia results in polymeric xerogels. Heating these gels in ammonia leads to amorphous Tb:SiN x phosphors that exhibit bright green luminescence under UV irradiation. MAS‐NMR and combustion analysis reveal that the phosphors are silicon nitride materials analogous to those typically produced by sol–gel routes. Photoluminescence behavior is similar to that of Tb:SiN x or Tb:SiO 2 films produced by ion implantation that show good electroluminescence activity.