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Fabrication and Tunable Dielectric Properties of Magnesium‐Doped Lead Barium Zirconate Thin Films
Author(s) -
Hao Xihong,
Zhai Jiwei,
Ren Huiping,
Song Xiwen,
Yang Jichun
Publication year - 2010
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2009.03487.x
Subject(s) - barium , dielectric , materials science , fabrication , doping , zirconate , magnesium , lead (geology) , thin film , optoelectronics , mineralogy , nanotechnology , composite material , ceramic , metallurgy , chemistry , medicine , alternative medicine , pathology , geomorphology , titanate , geology
In present work, (Pb 0.50 Ba 0.50 )ZrO 3 (PBZ) thin films doped by Mg from 0 to 5 mol% were deposited on Pt(111)/TiO 2 /SiO 2 /Si substrates by the sol–gel method. The phase structure of the Mg‐doped PBZ thin films were characterized by X‐ray diffraction. The electric‐field and temperature‐dependent electrical properties of the Mg‐doped PBZ thin films were also investigated in detail. It was found that the Mg content had a strong influence on the dielectric properties of the thin films. The maximum values of dielectric permittivity and dielectric loss were obtained with 1 mol% Mg‐doping PBZ thin films. However, the figure of merit (FOM) of the films was improved with increase in the Mg content.