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ZrB 2 –SiC Oxidation Protective Coating on C/C Composites Prepared by Vapor Silicon Infiltration Process
Author(s) -
Zhou Haijun,
Gao Le,
Wang Zhen,
Dong Shaoming
Publication year - 2010
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2009.03481.x
Subject(s) - oxidizing agent , materials science , chemical vapor infiltration , coating , composite material , isothermal process , layer (electronics) , silicon , composite number , infiltration (hvac) , oxidation process , silicon carbide , substrate (aquarium) , chemical engineering , metallurgy , chemistry , physics , oceanography , organic chemistry , engineering , thermodynamics , geology
ZrB 2 –SiC coating on C/C composites was prepared through vapor silicon infiltration process. The coated C/C composites showed excellent oxidation performance at 1500°C. Isothermal oxidation results showed that there was weight gain accompanied in the whole oxidation process and no evidence of oxidation of C/C composite substrate was observed. The thickness of coating increased from 120 μm to about 200 μm after oxidizing at 1500°C. Three distinct layers could be observed in the coating, namely, outer SiO 2 ‐rich layer, middle ZrB 2 ‐rich layer, and inner SiC‐rich layer. ZrB 2 particles were coarsened after oxidation.