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Microwave Dielectric Properties of Ba 3 (VO 4 ) 2 –Mg 2 SiO 4 Composite Ceramics
Author(s) -
Meng Siqin,
Yue Zhenxing,
Zhuang Hao,
Zhao Fei,
Li Longtu
Publication year - 2010
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2009.03429.x
Subject(s) - ceramic , dielectric , materials science , composite number , analytical chemistry (journal) , scanning electron microscope , microwave , dielectric resonator , diffraction , mineralogy , phase (matter) , composite material , optics , chemistry , optoelectronics , telecommunications , physics , organic chemistry , chromatography , computer science
Novel Ba 3 (VO 4 ) 2 –Mg 2 SiO 4 microwave dielectric composite ceramics with compositions of (1− x )Ba 3 (VO 4 ) 2 – x Mg 2 SiO 4 ( x =0.50–0.65) have been prepared by firing mixtures of Ba 3 (VO 4 ) 2 and Mg 2 SiO 4 . X‐ray diffraction and scanning electron microscopy analysis revealed that they coexist without forming secondary phases. Because their resonant frequency temperature coefficients (τ f ) have opposite signs, the τ f of the composite ceramic can be adjusted passing through zero by changing the relative content of the two phases. Dielectric property measurements were performed using the resonator method at around 11 GHz. Ceramics with Mg 2 SiO 4 55 wt% sintered at 1175°C exhibited microwave dielectric properties of dielectric constant ɛ r =9.03, Q × f =52 500 GHz, and τ f =0.6 ppm/°C at 11.3 GHz. In this composite ceramic, we observed that the formation of the MgSiO 3 secondary phase was suppressed.