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Voltage‐Dependent Low‐Field Bulk Resistivity in BaTiO 3 :Zn Ceramics
Author(s) -
Beltrán Héctor,
Prades Marta,
Masó Nahum,
Cordoncillo Eloisa,
West Anthony R.
Publication year - 2010
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2009.03416.x
Subject(s) - electrical resistivity and conductivity , grain boundary , materials science , ceramic , biasing , condensed matter physics , excited state , grain size , voltage , analytical chemistry (journal) , mineralogy , chemistry , atomic physics , metallurgy , electrical engineering , microstructure , physics , chromatography , engineering
Ceramics of composition Ba(Ti 1− x Zn x )O 3− x : 0.00003≤ x ≤0.01 exhibit modest semiconductivity, whose value is increased by up to two orders of magnitude under the action of a small dc bias voltage. The effect, which is not observed in undoped BaTiO 3 , occurs in both grain and grain boundary regions and is attributed to the nature of the defect structure, which contains highly polarized clusters. It is proposed that internal electron transfer within the clusters under the action of a dc bias voltage leads to a more conductive excited state, which gradually returns to the ground state when the dc bias is removed.