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Structural and Electrical Properties of Lead‐Free Perovskite Ba(Al 1/2 Nb 1/2 )O 3
Author(s) -
Prasad Kamal,
Chandra Kumar Prabhat,
Bhagat Sanjay,
Choudhary Shambhu Nath,
Kulkarni Ajit R.
Publication year - 2010
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1551-2916.2009.03394.x
Subject(s) - materials science , crystallite , permittivity , perovskite (structure) , dielectric , electrical resistivity and conductivity , analytical chemistry (journal) , crystal structure , mineralogy , condensed matter physics , crystallography , chemistry , electrical engineering , physics , optoelectronics , chromatography , engineering
Lead‐free perovskite Ba(Al 1/2 Nb 1/2 )O 3 was prepared by conventional ceramic fabrication technique at 1350°C/5 h in air atmosphere. The crystal symmetry, space group and unit cell dimensions were determined from the experimental results using FullProf software whereas crystallite size and lattice strain were estimated from Williamson‐Hall approach. X‐ray diffraction analysis of the compound indicated the formation of a single‐phase monoclinic structure with the space group P 2/ m . EDAX and SEM studies were carried out in order to evaluate the quality and purity of the compound. Permittivity data showed low‐temperature coefficient of capacitance ( T CC =14%) up to 100°C. To find a correlation between the response of the real system and idealized model circuit composed of discrete electrical components, the model fittings were presented using the impedance data. Complex impedance analyses suggested the dielectric relaxation to be of non‐Debye type. The correlated barrier‐hopping model was used to successfully explain the mechanism of charge transport in Ba(Al 1/2 Nb 1/2 )O 3 .